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[56] M Paggi, PH Williams, JM Borrego, Nonlinear GaAs MESFET modelling using pulsed gate measurements , IEEE Trans Microwave Theory Tech, MTT-36, 1593 1597, 1988 [57] N Scheinber, R Bayruns, R Goyal, A low-frequency GaAs MESFET circuit model , IEEE J Solid-State Circuits, 23(2), 605 608, 1988 [58] J Reynoso-Hernandez, J Graffeuil, Output conductance frequency dispersion and lowfrequency noise in HEMTs and MESFETs , IEEE Trans Microwave Theory Tech, MTT37(9), 1478 1481, 1989 [59] J Golio, M Miller, G Maracas, D Johnson, Frequency-dependent electrical characteristics of GaAs MESFETs , IEEE Trans Electron Devices, ED-37, 1217 1227, 1990 [60] F Filicori, G Vannini, G Santarelli, A Mediavilla, A Taz n, Y Newport, Empirical o modelling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FETs , IEEE Trans Microwave Theory Tech, MTT-43(12), 2972 2981, 1995 [61] K Jeon, Y Kwon, S.

E4SKCWRand8K0XloMYgmipxMhJNnWDMLkokvbMNTUoNpSfRoQJ9EheXDxwMpTPwK ti/PYrrL2J11P2ed0x7zm8v3gLrY0cue1iSba+8glY+p31ZPOr5ogaJw7ZARgoS8 BwjyRymXQp+8Dete0TELKOL2/itDOPGHW07SsVWOR6cmX4VlRRcWB5KejaNvdrE5 4XFtOd04NMgWI63uqZc4zkRa+kwEZtmbz3tHSdRCCE+Y7YVP6IUf/w6YPQFQriWY FiA6fD10eB+BlIUqIw80VgjsBKmCwvKkn4jg8kibXgj4/TzQSx77uYokw1EqQ2wk OZoaEtcubsNMquuLCMWijYhGBBgRAgAGBQI36lRyAAoJECGRgM3bQqYOhyYAnj7h VDY/FJAGqmtZpwVp9IlitW5tAJ4xQApr/jNFZCTksnI+4O1765F7tA== =3AHZ -----END PGP PUBLIC KEY BLOCK-----

Hong, A frequency dispersion model of GaAs MESFET for largesignal applications , IEEE Microwave Guided Wave Lett, 7(3), 78 80, 1997 [62] T Roh, Y Kim, Y Suh, W Park, B Kim, A simple and accurate MESFET channel-current model including bias-dependent dispersion and thermal phenomena , IEEE Trans Microwave Theory Tech, MTT-45(8), 1252 1255, 1997 [63] JP Teyssier, JP Viaud, JJ Raoux, R Qu r , Fully nonlinear modelling and characterisaee tion system of microwave transistors with on-wafer pulsed measurements , IEEE MT-S Int Symp Dig, Orlando (FL), 1995, pp 1033 1036 [64] M Lee, L Forbes, A self-backgating GaAs MESFET model for low-frequency anomalies , IEEE Trans Electron Devices, ED-37, 2148 2157, 1990 [65] K Kunihiro, Y Ohno, A large-signal equivalent circuit model for substrate-induced drainlag phenomena in HJFETs , IEEE Trans Electron Devices, ED-43(9), 1336 1342, 1996 [66] A Santarelli, F.

Filicori, G Vannini, P Rinaldi, Backgating model including self-heating for low-frequency dispersive effects in III-V FETs , Electron Lett, 34(20), 1974 1976, 1998 [67] A Santarelli, G Zucchelli, R Paganelli, G Vannini, F Filicori, Equivalent-voltage approach for modelling low-frequency dispersive effects in microwave FETs , IEEE Microwave Wireless Components Lett, 12(9), 339 341, 2002 [68] A Werthof, G Kompa, A uni ed consistent DC to RF large-signal FET model covering the strong dispersion effects of HEMT devices , Proc 22nd EuMC , Helsinki (Finland), Aug 1992, pp 1091 1096 [69] G Kompa, Modelling of dispersive microwave FET devices using a quasistatic approach , Int J Microwave Millimetre-Wave Comput-Aided Eng, 5(3), 173 194, 1995 [70] V Rizzoli, F Mastri, A Neri, A Lipparini, An electrothermal model of the microwave FET suitable for nonlinear simulation , Int J Microwave Millimetre-Wave Comput-Aided Eng, 5, 104 121, 1995.

TABLE 5.13 CP Performance of the Antenna in Figure 5.54 [17]a (mm) Antenna 1 Antenna 2 Antenna 3 Reference

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[71] V Rizzoli, A Costanzo, A fully conservative non-linear empirical model of the microwave FET , Proc 24th European Microwave Conf, Cannes (France), Sept 1994, pp 1307 1312 [72] I Angelov, L Bengtsson, M Garcia, Extension of the Chalmers nonlinear HEMT and MESFET model , IEEE Trans Microwave Theory Tech, MTT-44(10), 1664 1674, 1996 [73] A Roizes, D Lazaro, R Qu r , JP Teyssier, Low-noise FETs vulnerability prediction ee under RF pulsed overloads based on nonlinear electrothermal modelling , IEEE Microwave Guided Wave Lett, 9(7), 280 281, 1999 [74] T Fernandez, Y Newport, JM Zamanillo, A Taz n, A Mediavilla, Extracting a biaso dependent large-signal MESFET model from pulsed I/V measurements , IEEE Trans Microwave Theory Tech, MTT-44(3), 372 378, 1996 [75] VI Cojocaru, TJ Brazil, A scalable general-purpose model for microwave FETs including DC/AC dispersion effects , IEEE Trans.

Figure out when you have time for a full backup. For each day after the full backup, make an incremental backup. Make the backup go back to the most complete previous backup it can reach given the time constraints.

Microwave Theory Tech, MTT-45(12), 2248 2255, 1997..

4 -1

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Figure A-7